SI4622 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 30V 8A 8SOIC
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Power - Max | Vgs(th) (Max) @ Id [Max] | Current - Continuous Drain (Id) @ 25°C | Configuration | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 60 nC | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 8-SOIC | Surface Mount | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3.1 W 3.3 W | 2.5 V | 8 A | 2 N-Channel (Dual) | 2458 pF |