IRFR014 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

MOSFET N-CH 60V 7.7A DPAK

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division IRFR014TRR	DPAK	7.7 A	10 V	N-Channel	2.5 W 25 W	Surface Mount	11 nC	4 V	200 mOhm	60 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	300 pF
Vishay General Semiconductor - Diodes Division IRFR014TRPBF	DPAK	7.7 A	10 V	N-Channel	2.5 W 25 W	Surface Mount	11 nC	4 V	200 mOhm	60 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	300 pF
Vishay General Semiconductor - Diodes Division IRFR014TRPBF-BE3	TO-252AA	7.7 A	10 V	N-Channel	2.5 W 25 W	Surface Mount	11 nC	4 V	200 mOhm	60 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	300 pF
Vishay General Semiconductor - Diodes Division IRFR014PBF	DPAK	7.7 A	10 V	N-Channel	2.5 W 25 W	Surface Mount	11 nC	4 V	200 mOhm	60 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	300 pF
Vishay General Semiconductor - Diodes Division IRFR014TRL	DPAK	7.7 A	10 V	N-Channel	2.5 W 25 W	Surface Mount	11 nC	4 V	200 mOhm	60 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	300 pF
Vishay General Semiconductor - Diodes Division IRFR014TRLPBF-BE3	TO-252AA	7.7 A		N-Channel	2.5 W 25 W	Surface Mount	11 nC	4 V	200 mOhm	60 V	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	300 pF