SI4178 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 12A 8SO
| Part | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Technology | Vgs(th) (Max) @ Id | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | 12 nC | 8-SOIC | 21 mOhm | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | 2.8 V | 25 V | 4.5 V 10 V | 405 pF | 30 V | Surface Mount | 2.4 W 5 W | 12 A | -55 °C | 150 °C |