Bipolar Transistors, NPN + PNP Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/Infinity, SOT-363(US6)
Bipolar Transistors, NPN + PNP Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/Infinity, SOT-363(US6)
Bipolar Transistors, NPN + PNP Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/Infinity, SOT-363(US6)
| Part | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Resistor - Base (R1) | Mounting Type | Supplier Device Package | Package / Case | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 200 mW | 100 nA | 100 mA | 4.7 kOhms | Surface Mount | US6 | 6-TSSOP SC-88 SOT-363 | 200 MHz 250 MHz | 300 mV | 1 NPN 1 PNP - Pre-Biased (Dual) | 50 V | 120 |
Toshiba Semiconductor and Storage | 200 mW | 100 µA | 100 mA | 4.7 kOhms | Surface Mount | US6 | 6-TSSOP SC-88 SOT-363 | 200 MHz 250 MHz | 300 mV | 1 NPN 1 PNP - Pre-Biased (Dual) | 50 V | 120 |