SIHP21 Series

Catalog

MOSFET N-CH 600V 21A TO220AB

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max) [Max]	FET Type
Vishay General Semiconductor - Diodes Division SIHP21N60EF-BE3	10 V	Through Hole	21 A	84 nC	4 V	600 V	176 mOhm	TO-220AB	2030 pF	30 V	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3	227 W	N-Channel
Vishay General Semiconductor - Diodes Division SIHP21N60EF-GE3	10 V	Through Hole	21 A	84 nC	4 V	600 V	176 mOhm	TO-220AB	2030 pF	30 V	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3	227 W	N-Channel