SIA418 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 12A PPAK SC70-6
| Part | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | FET Type | Supplier Device Package | Mounting Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 30 V | 570 pF | 2.4 V | 3.5 W 19 W | 4.5 V 10 V | MOSFET (Metal Oxide) | 18 mOhm | -55 °C | 150 °C | 12 A | PowerPAK® SC-70-6 | N-Channel | PowerPAK® SC-70-6 | Surface Mount | 20 V | 17 nC |