NTD60N02R Series

Power MOSFET 25V 62A 10.5 mOhm Single N-Channel DPAK

Catalog

Power MOSFET 25V 62A 10.5 mOhm Single N-Channel DPAK

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NTD60N03T4	2150 pF	N-Channel	-55 °C	150 °C	Surface Mount	7.5 mOhm	4.5 V 10 V	DPAK	30 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	75 W	60 A	20 V	28 V	3 V
ON Semiconductor NTD60N02R-35G	1330 pF	N-Channel	-55 °C	175 ░C	Through Hole	10.5 mOhm	4.5 V 10 V	IPAK		TO-251-3 Stub Leads IPAK	MOSFET (Metal Oxide)	1.25 W 58 W	8.5 A 32 A	20 V	25 V	2 V	14 nC
ON Semiconductor NTD60N02R-1G	1330 pF	N-Channel	-55 °C	175 ░C	Through Hole	10.5 mOhm	4.5 V 10 V	IPAK		IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	1.25 W 58 W	8.5 A 32 A	20 V	25 V	2 V	14 nC
ON Semiconductor NTD60N03-001	2150 pF	N-Channel	-55 °C	150 °C	Through Hole	7.5 mOhm	4.5 V 10 V	IPAK	30 nC	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	75 W	60 A	20 V	28 V	3 V
ON Semiconductor NTD60N02RT4G	1330 pF	N-Channel	-55 °C	175 ░C	Surface Mount	10.5 mOhm	4.5 V 10 V	DPAK		DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	1.25 W 58 W	8.5 A 32 A	20 V	25 V	2 V	14 nC
ON Semiconductor NTD60N02R	1330 pF	N-Channel	-55 °C	175 ░C	Surface Mount	10.5 mOhm	4.5 V 10 V	DPAK		DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	1.25 W 58 W	8.5 A 32 A	20 V	25 V	2 V	14 nC

Power MOSFET 25V 62A 10.5 mOhm Single N-Channel DPAK

• Low RDS(on) to Minimize Conduction Loss

• Low Ciss to Minimize Driver Loss

• Low Gate Charge

• Optimized for High Side Switching Requirements in High Efficiency DC-DC Converters

• Pb-Free Packages are Available

Power MOSFET 62 Amps, 25 Volts, N-channel, DPAK