Catalog
650V 4A TO-220FM, High-speed switching Power MOSFET
Description
AI
R6504KNX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Beta
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650V 4A TO-220FM, High-speed switching Power MOSFET
650V 4A TO-220FM, High-speed switching Power MOSFET
| Part | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Package / Case | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | FET Type | Rds On (Max) @ Id, Vgs | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 40 W | 650 V | 20 V | 5 V | 270 pF | TO-220FM | 10 V | 150 °C | TO-220-3 Full Pack | Through Hole | 10 nC | 4 A | N-Channel | 1.05 Ohm | MOSFET (Metal Oxide) |