SI3433 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 4.3A 6TSOP
| Part | Vgs(th) (Max) @ Id | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Vgs (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | FET Type | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 850 mV | 6-TSOP | SOT-23-6 Thin TSOT-23-6 | 42 mOhm | 1.1 W | 8 V | Surface Mount | 18 nC | P-Channel | 20 V | -55 °C | 150 °C | 4.3 A | 1.8 V 4.5 V | MOSFET (Metal Oxide) |
Vishay General Semiconductor - Diodes Division | 850 mV | 6-TSOP | SOT-23-6 Thin TSOT-23-6 | 42 mOhm | 1.1 W | 8 V | Surface Mount | 18 nC | P-Channel | 20 V | -55 °C | 150 °C | 4.3 A | 1.8 V 4.5 V | MOSFET (Metal Oxide) |