GD25LE16 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 16MBIT SPI/QUAD 8WLCSP
| Part | Memory Organization [custom] | Memory Organization [custom] | Supplier Device Package | Package / Case | Mounting Type | Technology | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Clock Frequency | Access Time | Memory Format | Memory Type | Operating Temperature [Max] | Operating Temperature [Min] | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Size | Memory Interface | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 2 M | 8 | 8-WLCSP | 8-XFBGA WLCSP | Surface Mount | FLASH - NOR (SLC) | 60 µs | 2.4 ms | 133 MHz | 6 ns | FLASH | Non-Volatile | 85 C | -40 ¯C | 1.65 V | 2 V | 2 MB | QPI SPI - Quad I/O | ||
GigaDevice Semiconductor (HK) Limited | 2 M | 8 | 8-USON (3x2) | 8-XFDFN Exposed Pad | Surface Mount | FLASH - NOR (SLC) | 60 µs | 2.4 ms | 133 MHz | 6 ns | FLASH | Non-Volatile | 85 C | -40 ¯C | 1.65 V | 2 V | 2 MB | QPI SPI - Quad I/O | ||
GigaDevice Semiconductor (HK) Limited | 2 M | 8 | 8-SOP | 8-SOIC | Surface Mount | FLASH - NOR (SLC) | 60 µs | 2.4 ms | 133 MHz | 6 ns | FLASH | Non-Volatile | 85 C | -40 ¯C | 1.65 V | 2 V | 2 MB | QPI SPI - Quad I/O | 0.154 in | 3.9 mm |
GigaDevice Semiconductor (HK) Limited | 2 M | 8 | 8-USON (3x2) | 8-XFDFN Exposed Pad | Surface Mount | FLASH - NOR (SLC) | 100 µs | 4 ms | 133 MHz | 6 ns | FLASH | Non-Volatile | 125 °C | -40 °C | 1.65 V | 2 V | 2 MB | QPI SPI - Quad I/O |