TPH1R104 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 40V 120A 8SOP
| Part | Input Capacitance (Ciss) (Max) @ Vds | Grade | Operating Temperature | Qualification | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | FET Type | Power Dissipation (Max) | Power Dissipation (Max) | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package [x] | Supplier Device Package | Supplier Device Package [y] | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 4560 pF | Automotive | 175 °C | AEC-Q101 | 8-PowerVDFN | 6 V 10 V | 1.14 mOhm | 3 V | N-Channel | 960 mW | 132 W | MOSFET (Metal Oxide) | 40 V | 120 A | 5 | 8-SOP Advance | 5 | 55 nC | Surface Mount | 20 V |