SIHB8 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 500V 8.7A TO263
| Part | Vgs(th) (Max) @ Id | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Vgs (Max) | FET Type | Technology | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 5 V | TO-263 (D2PAK) | 527 pF | 156 W | 30 V | N-Channel | MOSFET (Metal Oxide) | 30 nC | 10 V | 850 mOhm | 8.7 A | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | -55 °C | 150 °C | 500 V |