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30 V, 350 mA dual N-channel Trench MOSFET
Description
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Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, 350 mA dual N-channel Trench MOSFET
30 V, 350 mA dual N-channel Trench MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Grade | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package | Qualification | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | FET Feature | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Power - Max [Max] | Package / Case | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 50 pF | Automotive | 1.4 Ohm | 30 V | 6-TSSOP | AEC-Q101 | 0.68 nC | 1.1 V | Logic Level Gate | Surface Mount | 350 mA | 150 °C | -55 °C | MOSFET (Metal Oxide) | 445 mW | 6-TSSOP SC-88 SOT-363 | 2 N-Channel (Dual) |