Zenode.ai Logo
Beta

TK7J90E Series

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 2.0 Ω@10V, TO-3P(N), π-MOSⅧ

Catalog

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 2.0 Ω@10V, TO-3P(N), π-MOSⅧ

PartDrive Voltage (Max Rds On, Min Rds On)FET TypeCurrent - Continuous Drain (Id) @ 25°CVgs (Max)Input Capacitance (Ciss) (Max) @ Vds [Max]Mounting TypeSupplier Device PackageRds On (Max) @ Id, VgsTechnologyDrain to Source Voltage (Vdss)Operating TemperaturePower Dissipation (Max)Package / CaseGate Charge (Qg) (Max) @ Vgs [Max]
GT30J121 - IGBTs, 600 V/30 A IGBT, TO-3P(N)
Toshiba Semiconductor and Storage
10 V
N-Channel
7 A
30 V
1350 pF
Through Hole
TO-3P(N)
2 Ohm
MOSFET (Metal Oxide)
900 V
150 °C
200 W
SC-65-3
TO-3P-3
32 nC