Catalog
Nch 80V 100A, TO-263AB, Power MOSFET
Description
AI
RJ1N04BBH is a power MOSFET with low on-resistance and high power package, suitable for switching, motor drives, and DC/DC converter.
Beta
⌘K
Nch 80V 100A, TO-263AB, Power MOSFET
Nch 80V 100A, TO-263AB, Power MOSFET
| Part | Technology | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | MOSFET (Metal Oxide) | 6 V 10 V | 46 nC | Surface Mount | 20 V | 3280 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 150 °C | 40 A 100 A | TO-263AB | 80 V | 5.3 mOhm | N-Channel |