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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Package / Case | Power Dissipation (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Type | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | MOSFET (Metal Oxide) | 0.7 nC | 150 °C | -55 °C | 20 pF | DFN0606-3 | Surface Mount | 2.3 Ohm | 3-XFDFN | 380 mW | 2.8 W | 380 mA | 60 V | N-Channel | 20 V | 1.5 V |