IDW20G65 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, DUAL COMMON CATHODE, 650 V, 10 A, 15 NC
| Part | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Package / Case | Reverse Recovery Time (trr) | Technology | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 10 A | 180 µA | 300 pF | TO-247-3 | 0 ns | SiC (Silicon Carbide) Schottky | PG-TO247-3 | 500 mA | 650 V | 1.7 V | 175 ░C | -55 °C | Through Hole |