BSZ100 Series
Manufacturer: INFINEON
Beta
⌘K
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 10 MOHM;
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Technology | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Mounting Type | Vgs (Max) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 1500 pF | 10 mOhm | PG-TSDSON-8 | 17 nC | 8-PowerTDFN | MOSFET (Metal Oxide) | 2.1 W 30 W | N-Channel | 30 V | Surface Mount | 20 V | 2.2 V | 4.5 V 10 V | 150 °C | -55 °C | ||
 INFINEON | 10 mOhm | PG-TSDSON-8 | 45 nC | 8-PowerVDFN | MOSFET (Metal Oxide) | 2.1 W 50 W | N-Channel | 60 V | Surface Mount | 20 V | 2.2 V | 4.5 V 10 V | 150 °C | -55 °C | 3500 pF | 11 A 20 A |