2ED2106 Series
Manufacturer: INFINEON
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THE 2ED2106S06F IS A 650 V 0.7 A HIGH AND LOW SIDE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER (DSO-8 PACKAGE)
| Part | Gate Type | High Side Voltage - Max (Bootstrap) [Max] | Mounting Type | Number of Drivers | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Input Type | Driven Configuration | Channel Type | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 675 V | Surface Mount | 2 | 290 mA | 700 mA | CMOS TTL | High-Side and Low-Side | Independent | 1.7 V | 1.1 V | 35 ns | 100 ns | PG-DSO-8-69 | 20 V | 10 VDC | 125 °C | -40 °C | 0.154 in | 8-SOIC | 3.9 mm |