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30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Vgs (Max) | Power Dissipation (Max) | Power Dissipation (Max) | Package / Case | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Technology | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs(th) (Max) @ Id | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 20 V | 8.3 W | 400 mW | 3-XDFN Exposed Pad | 120 mOhm | 309 pF | 30 V | MOSFET (Metal Oxide) | DFN1010D-3 | 2.4 A | 150 °C | -55 °C | 11 nC | 4.5 V 10 V | P-Channel | 2.5 V | Surface Mount |