IR21271 Series
Manufacturer: INFINEON
Beta
⌘K
EICEDRIVER™ 600 V HIGH-SIDE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP8 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: CURRENT SENSE, FAULT REPORTING, OVER-CURRENT PROTECTION (ITRIP), SINGLE INPUT
| Part | Gate Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Driven Configuration | High Side Voltage - Max (Bootstrap) [Max] | Package / Case | Channel Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Operating Temperature [Min] | Operating Temperature [Max] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Mounting Type | Input Type | Number of Drivers | Supplier Device Package | Logic Voltage - VIL, VIH | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 9 V | High-Side or Low-Side | 600 V | 8-DIP (0.300" 7.62mm) | Single | 40 ns | 80 ns | -40 °C | 150 °C | 250 mA | 500 mA | Through Hole | Non-Inverting | 1 | 8-PDIP | 0.8 V 3 V | ||
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 9 V | High-Side or Low-Side | 600 V | 8-SOIC | Single | 40 ns | 80 ns | -40 °C | 150 °C | 250 mA | 500 mA | Surface Mount | Non-Inverting | 1 | 8-SOIC | 0.8 V 3 V | 0.154 in | 3.9 mm |
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 9 V | High-Side or Low-Side | 600 V | 8-SOIC | Single | 40 ns | 80 ns | -40 °C | 150 °C | 250 mA | 500 mA | Surface Mount | Non-Inverting | 1 | 8-SOIC | 0.8 V 3 V | 0.154 in | 3.9 mm |
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 9 V | High-Side or Low-Side | 600 V | 8-DIP (0.300" 7.62mm) | Single | 40 ns | 80 ns | -40 °C | 150 °C | 250 mA | 500 mA | Through Hole | Non-Inverting | 1 | 8-PDIP | 0.8 V 3 V | ||
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 9 V | High-Side or Low-Side | 600 V | 8-SOIC | Single | 40 ns | 80 ns | -40 °C | 150 °C | 250 mA | 500 mA | Surface Mount | Non-Inverting | 1 | 8-SOIC | 0.8 V 3 V | 0.154 in | 3.9 mm |
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 9 V | High-Side or Low-Side | 600 V | 8-SOIC | Single | 40 ns | 80 ns | -40 °C | 150 °C | 250 mA | 500 mA | Surface Mount | Non-Inverting | 1 | 8-SOIC | 0.8 V 3 V | 0.154 in | 3.9 mm |
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 9 V | High-Side or Low-Side | 600 V | 8-DIP (0.300" 7.62mm) | Single | 40 ns | 80 ns | -40 °C | 150 °C | 250 mA | 500 mA | Through Hole | Non-Inverting | 1 | 8-PDIP | 0.8 V 3 V |