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30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs (Max) | Power Dissipation (Max) | Package / Case | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 49 nC | Surface Mount | 1638 pF | 30 V | 20 V | 1.9 W 12.5 W | 6-UDFN Exposed Pad | 2.5 V | DFN2020M-6 | MOSFET (Metal Oxide) | 150 °C | -55 °C | 4.5 V 10 V | P-Channel | 8.7 A | 15.5 mOhm |