High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 1.05 Ω@10V, IPAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 1.05 Ω@10V, IPAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 1.05 Ω@10V, IPAK, DTMOSⅣ
| Part | Technology | Rds On (Max) @ Id, Vgs | Package / Case | Operating Temperature | Vgs (Max) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 1.05 Ohm | TO-251-3 Stub Leads IPAK | 150 °C | 30 V | N-Channel | 11 nC | Through Hole | 3.5 V | 60 W | 390 pF | 650 V | 5.8 A | 10 V | IPAK |