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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Qualification | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Mounting Type | Supplier Device Package | FET Type | Package / Case | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Grade | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | AEC-Q101 | 9 pF | MOSFET (Metal Oxide) | 30 V | 3 Ohm | 1.5 V | Surface Mount | SOT-323 | N-Channel | SC-70 SOT-323 | 1.3 W 270 mW | 175 °C | -55 °C | 315 pC | 220 mA | Automotive | 2.5 V 10 V | 20 V |