BSZ0901 Series

Manufacturer: INFINEON

Catalog

OPTIMOS™ N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 2 MOHM;

Part	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Feature
INFINEON BSZ0901NSATMA1	MOSFET (Metal Oxide)	150 °C	-55 °C	2.2 V	22 A 40 A	45 nC	8-PowerTDFN	N-Channel	30 V	2.1 W 50 W	4.5 V 10 V	Surface Mount	2 mOhm	PG-TSDSON-8	20 V	2850 pF
INFINEON BSZ0901NSIATMA1	MOSFET (Metal Oxide)	150 °C	-55 °C	2.2 V	25 A 40 A	41 nC	8-PowerTDFN	N-Channel	30 V	2.1 W 69 W	4.5 V 10 V	Surface Mount	2.1 mOhm		20 V		2600 pF	Schottky Diode (Body)