Catalog
60 V, 6 A PNP high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
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60 V, 6 A PNP high power bipolar transistor
60 V, 6 A PNP high power bipolar transistor
| Part | Supplier Device Package | Package / Case | Vce Saturation (Max) @ Ib, Ic | Grade | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Operating Temperature | Power - Max [Max] | Qualification | Mounting Type | Transistor Type | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | LFPAK56 Power-SO8 | SC-100 SOT-669 | 525 mV | Automotive | 60 V | 100 nA | 175 °C | 1.35 W | AEC-Q101 | Surface Mount | PNP | 110 MHz | 120 |