IMW65R027 Series
Manufacturer: INFINEON
Beta
⌘K
COOLSIC™ MOSFET TECHNOLOGY LEVERAGES THE STRONG PHYSICAL CHARACTERISTICS OF SILICON CARBIDE, ADDING UNIQUE FEATURES WHICH INCREASE THE DEVICE PERFORMANCE, ROBUSTNESS, AND EASE OF USE.
| Part | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Type | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Vgs (Max) [Min] | Vgs (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 18 V | TO-247-3 | 62 nC | 650 V | 5.7 V | N-Channel | 47 A | Through Hole | 34 mOhm | PG-TO247-3-41 | 2131 pF | 150 °C | -55 °C | 189 W | -5 V | 23 V |