High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.23 Ω@10V, D2PAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.23 Ω@10V, D2PAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.23 Ω@10V, D2PAK, DTMOSⅣ
| Part | Rds On (Max) @ Id, Vgs | Supplier Device Package | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | FET Type | Vgs(th) (Max) @ Id [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Technology | Vgs (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 230 mOhm | D2PAK | Surface Mount | 10 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | N-Channel | 4.5 V | 1350 pF | 600 V | 15.8 A | 130 W | 43 nC | MOSFET (Metal Oxide) | 30 V | 150 °C |