IR2128 Series

Manufacturer: INFINEON

Catalog

THE IR2128S IS A 600 V SINGLE HIGH-SIDE GATE DRIVER IC WITH OVER CURRENT PROTECTION AND FAULT REPORTING (8 LEAD SOIC PACKAGE)

Part	Gate Type	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Logic Voltage - VIL, VIH	Driven Configuration	Channel Type	Package / Case	Package / Case	Package / Case	Input Type	Supplier Device Package	Number of Drivers	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]
INFINEON IR2128STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Surface Mount	600 V	-40 °C	150 °C	0.8 V 3 V	High-Side or Low-Side	Single	0.154 in	8-SOIC	3.9 mm	Inverting	8-SOIC	1	250 mA	500 mA	12 VDC	20 V	40 ns	80 ns
INFINEON IR2128S	IGBT MOSFET (N-Channel) N-Channel MOSFET	Surface Mount	600 V	-40 °C	150 °C	0.8 V 3 V	High-Side or Low-Side	Single	0.154 in	8-SOIC	3.9 mm	Inverting	8-SOIC	1	250 mA	500 mA	12 VDC	20 V	40 ns	80 ns
INFINEON IR2128SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Surface Mount	600 V	-40 °C	150 °C	0.8 V 3 V	High-Side or Low-Side	Single	0.154 in	8-SOIC	3.9 mm	Inverting	8-SOIC	1	250 mA	500 mA	12 VDC	20 V	40 ns	80 ns
INFINEON IR2128PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Through Hole	600 V	-40 °C	150 °C	0.8 V 3 V	High-Side or Low-Side	Single		8-DIP (0.300" 7.62mm)		Inverting	8-PDIP	1	250 mA	500 mA	12 VDC	20 V	40 ns	80 ns
INFINEON IR2128	IGBT MOSFET (N-Channel) N-Channel MOSFET	Through Hole	600 V	-40 °C	150 °C	0.8 V 3 V	High-Side or Low-Side	Single		8-DIP (0.300" 7.62mm)		Inverting	8-PDIP	1	250 mA	500 mA	12 VDC	20 V	40 ns	80 ns