IR2108 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 8DIP

Part	Gate Type	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Channel Type	Number of Drivers	Package / Case	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Logic Voltage - VIL, VIH	Input Type	Supplier Device Package	Package / Case	Package / Case
INFINEON IR2108	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	20 V	10 VDC	Through Hole	600 V	Independent	2	8-DIP (0.300" 7.62mm)	Half-Bridge	150 ns	50 ns	0.8 V 2.9 V	Non-Inverting	8-PDIP
INFINEON IR2108PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	20 V	10 VDC	Through Hole	600 V	Independent	2	8-DIP (0.300" 7.62mm)	Half-Bridge	150 ns	50 ns	0.8 V 2.9 V	Non-Inverting	8-PDIP
INFINEON IR2108SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	20 V	10 VDC	Surface Mount	600 V	Independent	2	8-SOIC	Half-Bridge	150 ns	50 ns	0.8 V 2.9 V	Non-Inverting	8-SOIC	0.154 in	3.9 mm
INFINEON IR2108STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	20 V	10 VDC	Surface Mount	600 V	Independent	2	8-SOIC	Half-Bridge	150 ns	50 ns	0.8 V 2.9 V	Non-Inverting	8-SOIC	0.154 in	3.9 mm
INFINEON IR2108STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	20 V	10 VDC	Surface Mount	600 V	Independent	2	8-SOIC	Half-Bridge	150 ns	50 ns	0.8 V 2.9 V	Non-Inverting	8-SOIC	0.154 in	3.9 mm
INFINEON IR2108S	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	20 V	10 VDC	Surface Mount	600 V	Independent	2	8-SOIC	Half-Bridge	150 ns	50 ns	0.8 V 2.9 V	Non-Inverting	8-SOIC	0.154 in	3.9 mm