High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.074 Ω@10V, TO-3P(N), DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.074 Ω@10V, TO-3P(N), DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.074 Ω@10V, TO-3P(N), DTMOSⅣ
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package | Power Dissipation (Max) | Operating Temperature | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 4100 pF | MOSFET (Metal Oxide) | SC-65-3 TO-3P-3 | 38.8 A | 10 V | 3.7 V | 135 nC | N-Channel | Through Hole | 65 mOhm | 600 V | TO-3P(N) | 270 W | 150 °C | 30 V |