Catalog
180 V, 1 A NPN high-voltage low VCEsat transistor
Description
AI
NPN high-voltage low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Beta
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180 V, 1 A NPN high-voltage low VCEsat transistor
180 V, 1 A NPN high-voltage low VCEsat transistor
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Qualification | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition | Current - Collector Cutoff (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Grade | Transistor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 180 V | AEC-Q101 | 60 mV | 30 MHz | 100 nA | 1 A | 150 °C | SC-59 SOT-23-3 TO-236-3 | TO-236AB | Surface Mount | 100 | Automotive | NPN |