BUK9Q4R6-40H Series

Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D)

Catalog

Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D)

Part	Power Dissipation (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Grade	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Qualification
Nexperia USA Inc. BUK9Q4R6-40HJ	84 W	175 °C	-55 °C	MOSFET (Metal Oxide)	90 A	40 V	4.6 mOhm	Automotive	Surface Mount Wettable Flank	20 V	52 nC	4.5 V 10 V	2.05 V	MLPAK33	8-PowerVDFN	N-Channel	3645 pF	AEC-Q101

Catalog

Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D)

Description

Logic level N-Channel MOSFET in a small MLPAK33-WF (SOT8002-3D) package using Trench 9 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.