High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.057 Ω@10V, TO-247, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.057 Ω@10V, TO-247, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.057 Ω@10V, TO-247, DTMOSⅣ
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Mounting Type | Rds On (Max) @ Id, Vgs | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Vgs (Max) | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 49.2 A | 6500 pF | TO-247-3 | Through Hole | 57 mOhm | 150 °C | 185 nC | N-Channel | 30 V | 400 W | 10 V | 650 V | 4.5 V | TO-247 |