N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Supplier Device Package | Technology | Mounting Type | Power - Max [Max] | Configuration | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 55 mOhm | 4.5 A | 8-SMD Flat Lead | 8-VSOF | MOSFET (Metal Oxide) | Surface Mount | 2.2 W | 2 N-Channel (Dual) | 30 V | 475 pF | 1.5 V | 5.4 nC | Logic Level Gate |