Catalog
100 V, 2 A PNP high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
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100 V, 2 A PNP high power bipolar transistor
100 V, 2 A PNP high power bipolar transistor
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Transistor Type | Current - Collector (Ic) (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Operating Temperature | Package / Case | Mounting Type | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 20 | 500 mV | LFPAK56 Power-SO8 | 100 V | PNP | 2 A | 100 nA | 25 W | 175 °C | SC-100 SOT-669 | Surface Mount | 125 MHz |