N-channel TrenchMOS standard level FET
N-channel TrenchMOS standard level FET
| Part | Qualification | Technology | Power Dissipation (Max) | Grade | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | AEC-Q101 | MOSFET (Metal Oxide) | 182 W | Automotive | D2PAK | 175 °C | -55 °C | 20 V | 10 V | 54 nC | 4 mOhm | 40 V | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4405 pF | Surface Mount | 75 A |