YQ3VWM10BTF Series

Trench MOS Structure, 100V, 3A, PMDE, Highly Efficient SBD for Automotive

Catalog

Trench MOS Structure, 100V, 3A, PMDE, Highly Efficient SBD for Automotive

Part	Operating Temperature - Junction	Capacitance @ Vr, F	Speed	Voltage - Forward (Vf) (Max) @ If	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Qualification	Supplier Device Package	Technology	Grade	Voltage - DC Reverse (Vr) (Max) [Max]
Rohm Semiconductor YQ3VWM10BTFTR	175 °C	50 pF	200 mA 500 ns	880 mV	2-SMD Flat Leads	Surface Mount	10 µA	3 A	AEC-Q101	PMDE	Schottky	Automotive	100 V

Catalog

Trench MOS Structure, 100V, 3A, PMDE, Highly Efficient SBD for Automotive

Description

The YQ3VWM10BTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.