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1N5552
Discrete Semiconductor Products

1N5552

Active
Solid State Inc.

DIODE GEN PURP 600V 3A AXIAL

1N5552
Discrete Semiconductor Products

1N5552

Active
Solid State Inc.

DIODE GEN PURP 600V 3A AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification1N5552
Capacitance100 pF
Current - Average Rectified (Io)3 A
Current - Reverse Leakage1 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)200 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseAxial
Package NameAxial
Reverse Recovery Time (trr)2 µs
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max)1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated

CAD

3D models and CAD resources for this part

Description

General part information

1N5552

Diode 600 V 3A Through Hole Axial

Documents

Technical documentation and resources

No documents available