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1N4004-T
Discrete Semiconductor Products

1N4004-T

Active
Rectron USA

DIODE GEN PURP 1A DO41

1N4004-T
Discrete Semiconductor Products

1N4004-T

Active
Rectron USA

DIODE GEN PURP 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification1N4004-T
Capacitance15 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage200 nA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)150 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseAxial, DO-204AL, DO-41
Package NameDO-41
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - Forward (Vf) (Max)1 V, 1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated

CAD

3D models and CAD resources for this part

Description

General part information

1N4004-T

Diode 1A Through Hole DO-41

Documents

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No documents available