Discrete Semiconductor Products
1N4001G-T
ActiveDiodes Inc
STANDARD RECOVERY DIODE, 50 V, 1 A, SINGLE, 1 V, 2000 NS, 30 A
Discrete Semiconductor Products
1N4001G-T
ActiveDiodes Inc
STANDARD RECOVERY DIODE, 50 V, 1 A, SINGLE, 1 V, 2000 NS, 30 A
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N4001G-T |
|---|---|
| Capacitance | 8 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -65 °C |
| Package / Case | Axial, DO-204AL, DO-41 |
| Package Name | DO-41 |
| Reverse Recovery Time (trr) | 2 µs |
| Speed | Standard Recovery |
| Speed - Fast Recovery (Minimum) | 200 mA, 500 ns |
| Speed - Recovery Current | 200 mA, 200 mA |
| Speed - Recovery Time | 500 ns |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) | 1 V, 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
CAD
3D models and CAD resources for this part
Description
General part information
1N4001G-T
Glass Passivated Die Construction
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
Documents
Technical documentation and resources