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J113RL1
Discrete Semiconductor Products

2SA1418S-TD-E

Active
Sanyo

PNP EPITAXIAL PLANAR SILICON TRA

J113RL1
Discrete Semiconductor Products

2SA1418S-TD-E

Active
Sanyo

PNP EPITAXIAL PLANAR SILICON TRA

Technical Specifications

Parameters and characteristics for this part

Specification2SA1418S-TD-E
Current - Collector (Ic) (Max)700 mA
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)100
Frequency - Transition120 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Package NamePCP
Power - Max0.5 W
Transistor TypePNP
Vce Saturation (Max)400 mV
Voltage - Collector Emitter Breakdown (Max)160 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 887$ 0.34<4d

CAD

3D models and CAD resources for this part

Description

General part information

2SA1418S-TD-E

Bipolar (BJT) Transistor PNP 160 V 700 mA 120MHz 500 mW Surface Mount PCP

Documents

Technical documentation and resources

No documents available