Discrete Semiconductor Products

TIP33CG

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ON Semiconductor

HIGH POWER NPN BIPOLAR POWER TRANSISTOR

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Discrete Semiconductor Products

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ON Semiconductor

HIGH POWER NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	TIP33CG

DC Current Gain (hFE) (Min) @ Ic, Vce	20
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-247-3
Power - Max [Max]	80 W
Supplier Device Package	TO-247-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

High Power NPN Bipolar Power Transistor

Part	Frequency - Transition	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic [Max]	Transistor Type	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package
ON Semiconductor TIP33CG	3 MHz	150 °C	-65 °C	4 V	NPN	80 W	20	Through Hole	TO-247-3	100 V	TO-247-3
ON Semiconductor TIP33C	3 MHz	150 °C	-65 °C	4 V	NPN	80 W	20	Through Hole	TO-218-3	100 V	SOT-93

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The Bipolar Power Transistor is designed for general-purpose power amplifier and switching applications