Technical Specifications
Parameters and characteristics for this part
| Specification | 2SA1528 |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 500 nA |
| DC Current Gain (hFE) (Min) | 50 |
| Frequency - Transition | 200 MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Package Name | 3-NP |
| Power - Max | 0.6 W |
| Resistor - Base (R1) Resistance | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Transistor Type | Pre-Biased, PNP |
| Vce Saturation (Max) | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Bulk | 2219 | $ 0.14 | 30d+ |
CAD
3D models and CAD resources for this part
Description
General part information
2SA1528
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 200 MHz 600 mW Through Hole 3-NP
Documents
Technical documentation and resources
No documents available