Discrete Semiconductor Products
G3S06504C
ActiveGlobal Power Technology-GPT
DIODE SIL CARB 650V 11.5A TO252
Discrete Semiconductor Products
G3S06504C
ActiveGlobal Power Technology-GPT
DIODE SIL CARB 650V 11.5A TO252
Technical Specifications
Parameters and characteristics for this part
| Specification | G3S06504C |
|---|---|
| Capacitance | 181 pF |
| Current - Average Rectified (Io) | 11.5 A |
| Current - Reverse Leakage | 50 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 3.02 | 30d+ |
| 30 | $ 2.40 | |||
| 120 | $ 2.05 | |||
| 510 | $ 1.83 | |||
| 1020 | $ 1.56 | |||
| 2010 | $ 1.47 | |||
| 5010 | $ 1.41 | |||
CAD
3D models and CAD resources for this part
Description
General part information
G3S06504C
Diode 650 V 11.5A Surface Mount TO-252
Documents
Technical documentation and resources
No documents available