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5-DFN, 8-SO Flat Lead
Discrete Semiconductor Products

NVMFS5832NLWFT1G

LTB
ON Semiconductor

POWER MOSFET 40V, 120A, 4.2 MOHM, SINGLE N-CHANNEL, SO8-FL, LOGIC LEVEL.

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5-DFN, 8-SO Flat Lead
Discrete Semiconductor Products

NVMFS5832NLWFT1G

LTB
ON Semiconductor

POWER MOSFET 40V, 120A, 4.2 MOHM, SINGLE N-CHANNEL, SO8-FL, LOGIC LEVEL.

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFS5832NLWFT1G
Current - Continuous Drain (Id) @ 25°C21 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]51 nC
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN, 5 Leads
Power Dissipation (Max)127 W, 3.7 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs4.2 mOhm
Supplier Device Package5-DFN (5x6)
Supplier Device Package8-SOFL
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NVMFS5A140PLZ Series

Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.