Discrete Semiconductor Products

BC32740TA

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ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 45 V, 800 MA, 625 MW, TO-92, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsProduct Change Notice EN Datasheet +2

Discrete Semiconductor Products

BC32740TA

Active

ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 45 V, 800 MA, 625 MW, TO-92, THROUGH HOLE

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet +2

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BC32740TA

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

BC327(LEGACY%20FAIRCHILD) Series

PNP Bipolar Transistor

Part	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	Transistor Type	Supplier Device Package	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Operating Temperature	Frequency - Transition
ON Semiconductor BC327-25ZL1G	45 V	100 nA	625 mW	160	Formed Leads TO-226-3 TO-92-3 Long Body	700 mV	800 mA	Through Hole	PNP	TO-92	TO-226	-55 °C	150 °C
ON Semiconductor BC327RL1G	45 V	100 nA	625 mW	100 hFE	Formed Leads TO-226-3 TO-92-3 Long Body	700 mV	800 mA	Through Hole	PNP	TO-92	TO-226	-55 °C	150 °C
ON Semiconductor BC32716BU	45 V	100 nA	625 mW	100 hFE	TO-226-3 TO-92-3	700 mV	800 mA	Through Hole	PNP	TO-92-3				150 °C	100 MHz
ON Semiconductor BC32725TAR	45 V	100 nA	625 mW	160	TO-226-3 TO-92-3	700 mV	800 mA	Through Hole	PNP	TO-92-3				150 °C	100 MHz
ON Semiconductor BC327BU	45 V	100 nA	625 mW	100 hFE	TO-226-3 TO-92-3	700 mV	800 mA	Through Hole	PNP	TO-92-3				150 °C	100 MHz
ON Semiconductor BC327-25RL1	45 V	100 nA	625 mW	160	Formed Leads TO-226-3 TO-92-3 Long Body	700 mV	800 mA	Through Hole	PNP	TO-92	TO-226	-55 °C	150 °C
ON Semiconductor BC327	45 V	100 nA	625 mW	100 hFE	TO-226-3 TO-92-3 Long Body	700 mV	800 mA	Through Hole	PNP	TO-92	TO-226	-55 °C	150 °C
ON Semiconductor BC32725TFR	45 V	100 nA	625 mW	160	TO-226-3 TO-92-3	700 mV	800 mA	Through Hole	PNP	TO-92-3				150 °C	100 MHz
ON Semiconductor BC327-40ZL1
ON Semiconductor BC32716BU	45 V	100 nA	625 mW	100 hFE	TO-226-3 TO-92-3	700 mV	800 mA	Through Hole	PNP	TO-92-3				150 °C	100 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.32
		10	$ 0.20
		100	$ 0.12
		500	$ 0.09
		1000	$ 0.08
	Tape & Box (TB)	2000	$ 0.07
		4000	$ 0.06
		6000	$ 0.06
		10000	$ 0.06
		14000	$ 0.05
		20000	$ 0.05
		50000	$ 0.05
		100000	$ 0.04
		200000	$ 0.04
Newark	Each	1	$ 0.35
		10	$ 0.22
		100	$ 0.10
		500	$ 0.10
		1000	$ 0.10

Description

General part information

BC327(LEGACY%20FAIRCHILD) Series

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Package Drawing-135AR-TO-92 3 4.83x4.76 Leadformed

Package Drawing