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onsemi-FJP5027OTU GP BJT Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube
Discrete Semiconductor Products

TIP29C

Obsolete
ON Semiconductor

TRANS GP BJT NPN 100V 1A 2000MW 3-PIN(3+TAB) TO-220 BAG

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onsemi-FJP5027OTU GP BJT Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube
Discrete Semiconductor Products

TIP29C

Obsolete
ON Semiconductor

TRANS GP BJT NPN 100V 1A 2000MW 3-PIN(3+TAB) TO-220 BAG

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTIP29C
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]300 µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 hFE
Frequency - Transition3 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]2 W
Supplier Device PackageTO-220
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
2334$ 1.05

Description

General part information

TIP29C

Bipolar (BJT) Transistor NPN 100 V 1 A 3MHz 2 W Through Hole TO-220

Documents

Technical documentation and resources