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TO-220-3
Discrete Semiconductor Products

TIP107G

Active
ON Semiconductor

8.0 A, 100 V PNP DARLINGTON POWER BIPOLAR JUNCTION TRANSISTOR

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Search across all available documentation for this part.

DocumentsDatasheetProduct Change Notice EN+3
TO-220-3
Discrete Semiconductor Products

TIP107G

Active
ON Semiconductor

8.0 A, 100 V PNP DARLINGTON POWER BIPOLAR JUNCTION TRANSISTOR

Deep-Dive with AI

DocumentsDatasheetProduct Change Notice EN+3

Technical Specifications

Parameters and characteristics for this part

SpecificationTIP107G
Current - Collector (Ic) (Max) [Max]8 A
Current - Collector Cutoff (Max) [Max]50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]1000
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]2 W
Supplier Device PackageTO-220
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 8949$ 1.65
Tube 1$ 1.66
10$ 1.05
100$ 0.71
500$ 0.56
1000$ 0.51
2000$ 0.47
5000$ 0.42
10000$ 0.40
NewarkEach 1$ 0.41
ON SemiconductorN/A 1$ 0.43

Description

General part information

TIP107G

High DC Current Gain -hFE= 2500 (typ) @ IC= 4.0 Adc

Collector-Emitter Sustaining Voltage -@ 30 mAdcVCEO(sus)= 100 Vdc (Min)

Low Collector-Emitter Saturation VoltageVCE(sat)= 2.0 Vdc(Max) @ IC= 3.0 AdcVCE(sat)= 2.5 Vdc(Max) @ IC= 8.0 Adc