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2N5598
Discrete Semiconductor Products

2N5598

Active
General Semiconductor

LOW FREQUENCY SILICON POWER NPN

2N5598
Discrete Semiconductor Products

2N5598

Active
General Semiconductor

LOW FREQUENCY SILICON POWER NPN

Technical Specifications

Parameters and characteristics for this part

Specification2N5598
Current - Collector (Ic) (Max)2 A
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-66-2, TO-213AA
Package NameTO-66 (TO-213AA)
Power - Max20 W
Supplier Device PackageTO-66, TO-213AA
Transistor TypePNP
Vce Saturation (Max)850 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 6$ 47.08<4d

CAD

3D models and CAD resources for this part

Description

General part information

2N5598

Bipolar (BJT) Transistor PNP 60 V 2 A 20 W Through Hole TO-66 (TO-213AA)

Documents

Technical documentation and resources

No documents available